Instability analysis of charges trapped in the oxide of metal-ultra thin oxide-semiconductor structuresA. Aziz, K. Kassmi, R. Maimouni, F. Olivié, G. Sarrabayrouse and A. MartinezEur. Phys. J. Appl. Phys., 31 3 (2005) 169-178DOI: https://doi.org/10.1051/epjap:2005055