Remote plasma assisted MOCVD growth of GaN on 4H-SiC: growth mode characterization exploiting ellipsometry
Eur. Phys. J. Appl. Phys., 31 3 (2005) 159-164
DOI: https://doi.org/10.1051/epjap:2005056
Download citation
Topical Collections
Open calls for papers
-
EPJ AM Call for papers: Themed Issue on Global Advances in Electromagnetic Metasurfaces for Space
(EPJ AM)
-
Call for papers : Special Issue on Imaging, Diffraction, and Spectroscopy on the micro/nanoscale
(EPJ AP)
-
EPJ C Topical Collection on String theory predictions for astroparticle and collider physics, and beyond
(EPJ C)