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Formation of anti-site defects and bismuth overstoichiometry in p-type Sb_2−xBi_xTe₃ thermoelectric crystals

G. Kavei and M. A. Karami

Eur. Phys. J. Appl. Phys., 42 2 (2008) 67-73

DOI: https://doi.org/10.1051/epjap:2008040

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