Investigation on base surface recombination in Self Passivated GaAlAs/GaInP/GaAs Heterojunction Bipolar TransistorR. Bourguiga, H. Sik and A. ScavennecEur. Phys. J. AP, 4 1 (1998) 27-29DOI: https://doi.org/10.1051/epjap:1998104