Individual charge traps in silicon nanowires - Measurements of location, spin and occupation number by Coulomb blockade spectroscopyM. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet and S. DeleonibusEur. Phys. J. B, 54 3 (2006) 299-307DOI: https://doi.org/10.1140/epjb/e2006-00452-x