Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientationsK. Köksal, B. Gönül and M. OduncuoğluEur. Phys. J. B, 69 2 (2009) 211-218DOI: https://doi.org/10.1140/epjb/e2009-00151-2