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Dependence of hole effective mass on nitrogen concentration in W-type strained InAs(N)/GaSb/InAs(N) quantum well lasers

S. Ridene, M. Debbichi, M. Saïd and H. Bouchriha

Eur. Phys. J. B, 85 1 (2012) 39

DOI: https://doi.org/10.1140/epjb/e2011-20482-5

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EPJ A Topical Collection devoted to the legacy of Peter Schuck
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