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Pecularities of Hall effect in GaAs/δ⟨Mn⟩/GaAs/InxGa1-xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

M.A. Pankov, B.A. Aronzon, V.V. Rylkov, A.B. Davydov, V.V. Tugushev, S. Caprara, I.A. Likhachev, E.M. Pashaev, M.A. Chuev, E. Lähderanta, A.S. Vedeneev and A.S. Bugaev
Eur. Phys. J. B, 85 6 (2012) 206
DOI: https://doi.org/10.1140/epjb/e2012-30149-4


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