Impact of the vertical strain on the Schottky barrier height for graphene/AlN heterojunction: a study by the first-principles methodXuefei Liu, Zhaocai Zhang, Bing Lv, Zhao Ding and Zijiang LuoEur. Phys. J. B, 94 1 (2021) 28DOI: https://doi.org/10.1140/epjb/s10051-020-00010-w