Ultra-slow dynamic annealing of neutron-induced defects in n-type silicon: role of charge carriersYing Zhang, Yang Liu, Hang Zhou, Ping Yang, Jie Zhao and Yu SongEur. Phys. J. Plus, 135 10 (2020) 827DOI: https://doi.org/10.1140/epjp/s13360-020-00849-z