Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinementsDariush Madadi and Ali Asghar OroujiEur. Phys. J. Plus, 136 7 (2021) 785DOI: https://doi.org/10.1140/epjp/s13360-021-01787-0